47

Features:

1. Heavy working current.Good temperature stability.Excellent thermal fatigue capability.

2. Good Switching Characteristic.

3. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611

4. Use for Low-speed switch,low frequency power amplify,power adjustment.

5. Quality Class: JP, JT, JCT, GS, G, G+

TECHNICAL DATA:

(Ta = 25°C )

Specifications

Parameter name

Symbols Unit

BUV20

BUV21

BUV22

BUV23

BUV24

Total Dissipation (Tc=25

°C)

Ptot

W

250

Max. Collector Current

ICM

A

50

40

40

30

20

Junction Temperature

Tjm

°C

175

Collector-Base Breakdown

Voltage

V(BR)CBO V

≥160

≥250

≥300

≥400

≥450

≥125

≥200

≥250

≥325

≥400

Collector-Emitter Breakdown

Voltage

V(BR)CEO V

IC=10mA

≥7

Emitter-Base Breakdown

Voltage

V(BR)EBO V

IE=1mA

Collector- Emitter

Saturation Voltage Drop

IC=

IB=

VCE(sat)

V

≤1.2

50A

5A

≤1.5

25A

3A

≤1.5

20A

2.5A

≤0.8

8A

1.6A

≤0.6

6A

1.2A

≤3.0

Collector-Emitter Laekage

Current

ICEO

mA

VCE=100V

VCE=160V

VCE=200V

VCE=250V

VCE=300V

Emitter-Base Laekage Current

IEBO

mA

≤1.0 (VEB=7V)

20~60

15~60

DC Current Gain

VCE=,

IC=

hFE

2V, 25A

2V, 12A

4V, 10A

4V, 8A

4V, 6A

Transition frequency

fT

MHz

≥8 (VCE= 15V, IC=2A,f=4MHz)

Rise Time

tr

us

≤1.5

≤1.2

≤1.3

≤0.8

≤1.6

Storage Time

ts

us

≤1.2

≤1.8

≤2.5

≤2.5

≤2.3

Fall Time

VCE=

IC=

IB1=

IB2=

tf

us

≤0.3

30V

50A,

5A

-5A

≤0.4

100V

25A

3A

-3A

≤0.5

100V

20A

2.5A

-2.5A

≤1.0

100V

16A

3.2A

-3.2A

≤1.4

120V

12A

2.4A

-2.4A

Outline and Dimensions:

BUV20,BUV21,BUV22,BUV23,BUV24

NPN Silicon Low Frequency High Power Switching Transistor

共

Contact: Jandy Lei

Tel.: 13991730782

QQ: 1142478250

sxqlljd@hotmail.com