STP8NM50FP datasheet(3/14 Pages) STMICROELECTRONICS

3 / 14 page

STP8NM50 - STP8NM50FP

Electrical ratings

3/14

Electrical ratings

Table 1.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220

TO-220FP

VGS

Gate-source voltage

± 30

Drain current (continuous) at TC = 25°C

8 (1)

Limited only by maximum temperature allowed

Drain current (continuous) at TC = 100°C

5 (1)

IDM

(2)

Pulse width limited by safe operating area

Drain current (pulsed)

32 (1)

PTOT

Total dissipation at TC = 25°C

100

Derating factor

0.8

W/°C

dv/dt(3)

ISD ≤8 A, di/dt ≤200 A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX.

Peak diode recovery voltage slope

V/ns

VISO

Insulation withstand voltage (RMS) from all three

leads to external heat sink (t=1s;TC=25°C)

2500

Tstg

Operating junction temperature

Storage temperature

-65 to 150

°C

Table 2.

Thermal data

Symbol

Parameter

TO-220

TO-220FP

Unit

Rthj-case

Thermal resistance junction-case max

1.25

°C/W

Rthj-amb

Thermal resistance junction-amb max

62.5

°C/W

Maximum lead temperature for soldering purpose

300

°C

Table 3.

Avalanche characteristics

Symbol

Parameter

Max value

Unit

IAR

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj max)

2.5

EAS

Single pulse avalanche energy

(starting Tj=25°C, ID=IAR, VDD= 50V)

200

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