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TC7SH08FE Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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TC7SH08FE Datasheet(HTML) 1 Page - Toshiba Semiconductor |
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1 / 5 page  TC7SH08FE TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SH08FE 2 Input AND Gate Features Weight: 0.003 g (typ.) • Super high speed operation :tPD = 4.3 ns (typ.) @VCC = 5 V • Low power dissipation : ICC = 2 µA (Max.) @ Ta = 25°C • High noise immunity : VNIH = VNIH = 28% VCC (Min.) • 5.5V tolerant input. • Wide operation voltage range : VCC (opr) = 2~5.5 V Marking Pin Assignment (top view) 1 2 5 4 VCC OUT Y 3 Type name H 2 IN B IN A GND Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Supply voltage range VCC −0.5~7 V DC input voltage VIN −0.5~7 V DC output voltage VOUT −0.5~VCC + 0.5 V Input diode current IIK −20 mA Output diode current IOK ±20 mA DC output current IOUT ±25 mA DC VCC/ground current ICC ±50 mA Power dissipation PD 150 mW Storage temperature Tstg −65~150 °C 2004-02-08 1 |
Similar Part No. - TC7SH08FE |
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