DF2S8.2S

2007-11-01

1

TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type

DF2S8.2S

Product for Use Only as Protection against Electrostatic

Discharge (ESD).

* This product is for protection against electrostatic discharge (ESD)

only and is not intended for any other usage, including without

limitation, the constant voltage diode application.

2terminal ultra small package suitable for mounting on small space.

Characteristic

Symbol

Rating

Unit

Power dissipation

P

150*

mW

Junction temperature

150

°C

Storage temperature range

−55~150

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate, etc).

*: Mounted on a glass-epoxy circuit board of 20 × 20 mm, pad dimensions of 4 × 4 mm.

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Zener voltage

7.7

8.2

8.7

V

Dynamic impedance

―

―

30

Ω

Reverse current

―

―

0.5

μA

Total capacitance

―

20

―

pF

Guaranteed Level of ESD Immunity

Marking

7

Criterion: No damage to device elements

Unit: mm

JEDEC

⎯

JEITA

⎯

TOSHIBA

1-1K1A

Weight: 0.001 g (typ.)

Test Condition

ESD Immunity Level

IEC61000-4-2

(contact discharge)

±30 kV