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30F131 Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part # 30F131
Description  Strobe Flash Applications
PDF  7 Pages
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

30F131 Datasheet(HTML) 2 Page - Toshiba Semiconductor

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GT8G133
2006-11-02
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGES
VGE = ± 6 V, VCE = 0
⎯
⎯
± 10
μA
Collector cut-off current
ICES
VCE = 400 V, VGE = 0
⎯
⎯
10
μA
Gate-emitter cut-off voltage
VGE (OFF)
IC = 1 mA, VCE = 5 V
0.7
1.05
1.4
V
Collector-emitter saturation voltage
VCE (sat)
IC = 150 A, VGE = 4 V
⎯
2.9
⎯
V
Input capacitance
Cies
VCE = 10 V, VGE = 0, f = 1 MHz
⎯
2500
⎯
pF
Rise time
tr
⎯
1.6
⎯
Turn-on time
ton
⎯
1.7
⎯
Fall time
tf
⎯
1.7
⎯
Switching time
Turn-off time
toff
⎯
2.0
⎯
μs
Note
Note 1: Please use devices on condition that the junction temperature is below 150°C.
Repetitive rating: pulse width limited by maximum junction temperature.
Note 2a : Device mounted on
Note 2b : Device mounted on
a glass-epoxy board (a)
a glass-epoxy board (b)
Note 3: ○ on lower right of the marking indicates Pin 1.
※
Pb-Free Finish (Only a coating lead terminal) :
It is marking about an underline to a week of manufacture mark.
FR-4
25.4
× 25.4 × 0.8
(unit : mm)
FR-4
25.4
× 25.4 × 0.8
(unit : mm)
※
Weekly code:
(Three digits)
Week of manufacture
(01 for first week of year, continues up to 52 or 53)
Year of manufacture
(One low-order digits of calendar year)
for GATE
for COLLECTOR
for EMITTER
for COLLECTOR
for EMITTER
for GATE
VIN: tr <= 100 ns
tf <= 100 ns
Duty cycle <= 1%
4 V
0
51
Ω
≒
300V



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