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30F131 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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30F131 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
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2 / 7 page ![]() GT8G133 2006-11-02 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGES VGE = ± 6 V, VCE = 0 ⎯ ⎯ ± 10 μA Collector cut-off current ICES VCE = 400 V, VGE = 0 ⎯ ⎯ 10 μA Gate-emitter cut-off voltage VGE (OFF) IC = 1 mA, VCE = 5 V 0.7 1.05 1.4 V Collector-emitter saturation voltage VCE (sat) IC = 150 A, VGE = 4 V ⎯ 2.9 ⎯ V Input capacitance Cies VCE = 10 V, VGE = 0, f = 1 MHz ⎯ 2500 ⎯ pF Rise time tr ⎯ 1.6 ⎯ Turn-on time ton ⎯ 1.7 ⎯ Fall time tf ⎯ 1.7 ⎯ Switching time Turn-off time toff ⎯ 2.0 ⎯ μs Note Note 1: Please use devices on condition that the junction temperature is below 150°C. Repetitive rating: pulse width limited by maximum junction temperature. Note 2a : Device mounted on Note 2b : Device mounted on a glass-epoxy board (a) a glass-epoxy board (b) Note 3: ○ on lower right of the marking indicates Pin 1. ※ Pb-Free Finish (Only a coating lead terminal) : It is marking about an underline to a week of manufacture mark. FR-4 25.4 × 25.4 × 0.8 (unit : mm) FR-4 25.4 × 25.4 × 0.8 (unit : mm) ※ Weekly code: (Three digits) Week of manufacture (01 for first week of year, continues up to 52 or 53) Year of manufacture (One low-order digits of calendar year) for GATE for COLLECTOR for EMITTER for COLLECTOR for EMITTER for GATE VIN: tr <= 100 ns tf <= 100 ns Duty cycle <= 1% 4 V 0 51 Ω ≒ 300V |
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