2SA562TM

2007-11-01

1

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

2SA562TM

Audio Frequency Low Power Amplifier Applications

Driver Stage Amplifier Applications

Switching Applications

• 1 watt amplifier application.

• Complementary to 2SC1959.

Characteristics

Symbol

Rating

Unit

Collector-base voltage

−35

V

Collector-emitter voltage

−30

V

Emitter-base voltage

−5

V

Collector current

−500

mA

Base current

−100

mA

Collector power dissipation

500

mW

Junction temperature

150

°C

Storage temperature range

−55~150

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating

conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

⎯

⎯

−0.1

μA

Emitter cut-off current

⎯

⎯

−0.1

μA

(Note)

70

⎯

240

DC current gain

(Note)

25

⎯

⎯

Collector-emitter saturation voltage

⎯

−0.1

−0.25

V

Base-emitter voltage

⎯

−0.8

−1.0

V

Transition frequency

⎯

200

⎯

MHz

Collector output capacitance

⎯

13

⎯

pF

Unit: mm

JEDEC

TO-92

JEITA

SC-43

TOSHIBA

2-5F1B

Weight: 0.21 g (typ.)