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2SC5392 Datasheet(PDF) 1 Page - Panasonic Semiconductor |
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2SC5392 Datasheet(HTML) 1 Page - Panasonic Semiconductor |
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1 / 3 page  1 Power Transistors 2SC5392 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching s Features q High-speed switching q High collector to base voltage VCBO q Wide area of safe operation (ASO) q Satisfactory linearity of foward current transfer ratio hFE q Dielectric breakdown voltage of the package: > 5kV s Absolute Maximum Ratings (T C=25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCES VCEO VEBO ICP IC IB PC Tj Tstg Ratings 800 800 500 8 3.0 1.5 0.5 25 2.0 150 –55 to +150 Unit V V V V A A A W ˚C ˚C s Electrical Characteristics (T C=25˚C) Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Symbol ICBO IEBO VCEO hFE1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 800V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 5V, IC = 0.1A VCE = 5V, IC = 0.6A IC = 0.6A, IB = 0.17A IC = 0.6A, IB = 0.17A VCE = 10V, IC = 0.1A, f = 1MHz IC = 0.6A, IB1 = 0.17A, IB2 = – 0.34A, VCC = 200V min 500 15 8 typ 20 max 100 100 1.0 1.5 1.0 3.0 0.3 Unit µA µA V V V MHz µs µs µs TC=25°C Ta=25 °C Unit: mm 1:Base 2:Collector 3:Emitter TO–220D Full Pack Package 1 9.9 ±0.3 4.6 ±0.2 2.9 ±0.2 0.8 ±0.1 1.4 ±0.2 23 φ3.2±0.1 2.6 ±0.1 0.55 ±0.15 2.54 ±0.3 5.08 ±0.5 1.6 ±0.2 |
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