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2SA1202 Datasheet(PDF) 3 Page - Toshiba Semiconductor

Part # 2SA1202
Description  Power Amplifier Applications Voltage Amplifier Applications
PDF  4 Pages
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SA1202 Datasheet(HTML) 3 Page - Toshiba Semiconductor

  2SA1202 Datasheet HTML 1Page - Toshiba Semiconductor 2SA1202 Datasheet HTML 2Page - Toshiba Semiconductor 2SA1202 Datasheet HTML 3Page - Toshiba Semiconductor 2SA1202 Datasheet HTML 4Page - Toshiba Semiconductor  
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2SA1202
2006-11-09
3
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector-emitter voltage VCE (V)
IC – VCE
Base-emitter voltage VBE (V)
IC – VBE
Safe Operating Area
hFE – IC
Collector current IC (mA)
VCE (sat) – IC
Ambient temperature Ta (°C)
PC – Ta
0
−8
−4
−2
0
−200
−400
Common emitter
Ta
= 25°C
−300
−6
−100
−10
IB = −0.5 mA
0
−5
−3
−2
−1
−12
Common emitter
VCE = −2 V
−1
300
−10
−300
−3
50
10
−30
−100
100
500
Ta
= 100°C
25
−25
30
−1
−0.5
−10
−300
−3
−0.1
−0.01
−30
−100
−0.3
−1
Ta
= 100°C
25
−25
−0.03
Common emitter
IC/IB = 10
−0.05
0
−0.8
−0.4
−0.2
0
−200
−400
Common emitter
VCE = −2 V
−300
−0.6
−100
−1.0
−1.2
Ta
= 100°C
25
−25
0
0
0.6
0.2
0.8
0.4
1.2
1.0
120
80
100
40
60
20
140
160
(1) Mounted on a ceramic
substrate (250 mm
2
× 0.8 t)
(2) No heat sink
(1)
(2)
*: Single nonrepetitive pulse
Ta
= 25°C
Curves must be derated linearly
with increase in temperature.
Tested without a substrate.
−0.5
−1
−10
−1
−100
−300
−3
−30
−10
−100
−5
−50
IC max (pulse)*
IC max (continuous)
100 ms*
1 ms*
10 ms*
VCEO max
−30
−3
−300
−2000
−1000
−500
DC
operation
Ta
= 25°C



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