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2SB907 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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2SB907 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
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2 / 5 page ![]() 2SB907 2006-11-21 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = −60 V, IE = 0 ― ― −20 μA Emitter cut-off current IEBO VEB = −5 V, IC = 0 ― ― −2.5 mA Collector-emitter breakdown voltage V (BR) CEO IC = −25 mA, IB = 0 −40 ― ― V hFE (1) VCE = −2 V, IC = −1 A 2000 ― ― DC current gain hFE (2) VCE = −2 V, IC = −3 A 1000 ― ― Collector-emitter saturation voltage VCE (sat) IC = −2 A, IB = −4 mA ― ― −1.5 V Base-emitter saturation voltage VBE (sat) IC = −2 A, IB = −4 mA ― ― −2.0 V Turn-on time ton ― 0.30 ― Storage time tstg ― 0.60 ― Switching time Fall time tf −IB1 = IB2 = 6 mA, DUTY CYCLE ≤ 1% ― 0.25 ― μs Marking B907 Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Part No. (or abbreviation code) VCC = −30 V 20 μs IN PUT IB2 IB1 OUTPUT IB2 |
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