TLP591B

2002-09-25

1

TOSHIBA Photocoupler GaAℓAs Ired & Photo

−Diode Array

TLP591B

Telecommunication

Programmable Controllers

MOS Gate Driver

MOS FET Gate Driver

The TOSHIBA TLP591B consists of an aluminum galium arsenide

infrared emitting diode optically coupled to a series connected

photo−diode array in a six lead plastic DIP package.

TLP591B is suitable for MOS FET gate driver.

TLP591B has an internal shunt resistor to optimize switching speed.

• UL recognized: UL1577, file no. E67349

Characteristic

Symbol

Rating

Unit

Forward current

50

mA

Forward current derating

(Ta ≥ 25°C)

−0.5

mA /°C

Pulse forward current

(100μs pulse, 100pps)

1

A

Reverse voltage

3

V

Junction temperature

125

°C

Forward current

50

μA

Reverse voltage

10

V

Junction temperature

125

°C

Storage temperature range

−55~125

°C

Operating temperature range

−40~85

°C

Lead soldering temperature (10 sec.)

260

°C

Isolation voltage

(AC, 1 min., R.H.≤ 60%)

(Note 1)

2500

(Note 1) Device considered a two terminal device: Pins 1, 2 and 3

shorted together, and pins 4 and 6 shorted together.

1. : Anode

2. : Cathode

3. : NC

4. : Cathode

6. : Anode

1

2

4

6

3

Unit in mm

TOSHIBA

11−7A9