SSM5N16FE

2007-11-01

1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

SSM5N16FE

High Speed Switching Applications

Analog Switching Applications

• Suitable for high-density mounting due to compact package

(Q1, Q2 Common)

Characteristics

Symbol

Rating

Unit

Drain-Source voltage

20

V

Gate-Source voltage

±10

V

DC

100

Drain current

Pulse

200

mA

Drain power dissipation (Ta

= 25°C)

150

mW

Channel temperature

150

°C

Storage temperature range

−55~150

°C

Note:

Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure

rate, etc).

Note 1: Total rating, mounted on FR4 board

(25.4 mm

Marking

Equivalent Circuit

Handling Precaution

When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment

is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other

objects that come into direct contact with devices should be made of anti-static materials.

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-2P1B

0.3 mm

D S

5

4

1

2

3

54

123

Q1

Q2