SSM6L16FE

2007-11-01

1

TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type

SSM6L16FE

High Speed Switching Applications

Analog Switch Applications

• Small package

• Low on-resistance

Characteristics

Symbol

Rating

Unit

Drain-Source voltage

20

V

Gate-Source voltage

±10

V

DC

100

Drain current

Pulse

200

mA

Characteristics

Symbol

Rating

Unit

Drain-Source voltage

-20

V

Gate-Source voltage

±10

V

DC

-100

Drain current

Pulse

-200

mA

(Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Drain power dissipation (Ta

= 25°C)

150

mW

Channel temperature

150

°C

Storage temperature range

−55~150

°C

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Total rating, mounted on FR4 board

(25.4 mm

× 25.4 mm × 1.6 t, Cu Pad: 0.135 mm

Unit: mm

1: Source1

2: Gate1

3: Drain2

4: Source2

5: Gate2

6: Drain1

JEDEC

―

JEITA

―

TOSHIBA

2-2N1D

0.3 mm