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BYW81P-200 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BYW81P-200 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  Fast Recovery Diode BYW81P-200 www.iscsemi.com 1 FEATURES · Suited for SMPS · Very low forward losses · Negligible switching losses · High surge current capability · High avalanche energy capability APPLICATIONS · Switch mode power supply · High frequency DC to DC converters ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage 200 V IF(AV) Average Rectified Forward Current 15 A IFSM Non-repetitive Peak Surge Current (Surge applied at rated load conditions half- wave, single phase, 60Hz) 200 A TJ Junction Temperature -40~150 ℃ Tstg Storage Temperature Range -40~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.0 ℃ /W TO-220C Package 3 1 2 |
Similar Part No. - BYW81P-200 |
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Similar Description - BYW81P-200 |
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