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ISB3013 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISB3013 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  Silicon NPN RF Power Transistor ISB3013 www.iscsemi.com 1 DESCRIPTION · Low Noise and High Gain NF = 1.5 dB TYP @VCE = 6V, IC = 5 mA, f = 1.0 GHz · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for low noise amplifier at VHF, UHF ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 2.0 V IC Collector Current-Continuous 0.1 A PC Collector Power Dissipation @TC=25℃ 150 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ |
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