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TA4019F Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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TA4019F Datasheet(HTML) 2 Page - Toshiba Semiconductor |
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2 / 7 page ![]() TA4019F 2007-11-01 2 Electrical Characteristics (Ta = 25°C, VCC = 5 V, Zg = Zl = 50 Ω) Characteristics Symbol Test Circuit Test Condition Min Typ. Max Unit Circuit current Icc Non carrier 28 35 42 mA Band width BW (Note 2) 200 300 ⎯ MHz Input return loss |S11|2 f = 45MHz ⎯ −0.3 ⎯ dB Insertion gain (1) |S21|2(1) Fig2 f = 45MHz 27 30 33 dB Insertion gain (2) |S21|2(2) Fig1 f = 45MHz 7.5 10.5 13.5 dB Isolation |S12|2 f = 45MHz ⎯ −57 ⎯ dB Output return loss |S22|2 f = 45MHz ⎯ −2.1 ⎯ dB Noise figure NF f = 45MHz ⎯ 8 11 dB 3 rd order inter modulation IM3 Fig2 f1 = 45 MHz, f2 = 44 MHz, Pin = −35dBmW 47 53 ⎯ dB Note 2: BW is the frequency of 3dB down from |S21| 2 at 45 MHz. CAUTION: This device electrostatic sensitivity. Please handle with caution. |
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