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2N6248 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # 2N6248
Description  Silicon PNP Power Transistor
PDF  3 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2N6248 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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Silicon PNP Power Transistor
2N6248
www.iscsemi.com
1
DESCRIPTION
·
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min)
·
Low Collector Saturation Voltage-
: VCE(sat)= -3.5V(Max)@ IC= -10A
APPLICATIONS
·
Designed for DC-DC converter, emergency lighting
inverter and general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-110
V
VCEO
Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-15
A
IB
Base Current-Continuous
-5
A
PC
Collector Power Dissipation
@ TC=25℃
125
W
TJ
Junction Temperature
200
℃
Tstg
Storage Temperature Range
-65~200
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.4
℃
/W
3


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