Symbol

Parameter

Conditions

Min

Max

Unit

Drain-source breakdown voltage

VGS = 0V, ID = 250µA

Drain-source leakage current

VDS = 60V, VGS = 0V

VDSS

IDSS

60

1

V

Typ

Off Characteristics

Electrical Characteristics (at TA=25°C unless otherwise noted)

Gate-body leakage

VGS = ±20V, VDS = 0V

IGSS

±10

µA

µA

2.5

VDS = VGS, ID = 250µA

VGS = 5V, ID = 0.05A

RDS(ON)

3

1

Gate threshold voltage

VGS(th)

Static drain-source on resistance

Reverse transfer capacitance

Input capacitance

Turn-on delay time

Turn-off delay time

Turn-on rise time

Turn-off fall time

Coss

Crss

td(on)

tr

td(off)

tf

6

5

25

15

nS

VGS = 0V, VDS = 20V, f = 1MHZ

Ciss

41

Dynamic Characteristics (Note 3)

Output capacitance

15

4

pF

VGS = 10V, RG = 25Ω,

RL = 150Ω

VDD = 30V, ID = 0.2A,

Switching Characteristics (Note 3)

V

1.5

1.5

Page 2

MOSFET

Comchip Technology CO., LTD.

Company reserves the right to improve product design , functions and reliability without notice.

On Characteristics (Note 2)

Drain-Source Diode Characteristics

Diode forward voltage (Note 1)

VSD

0.85

1.2

V

IS = 0.3A, VGS = 0V

Ω

Diode continuous forward current

IS

0.3

A

TC =25°C

VGS = 10V, ID = 0.5A

2.5

1.45

Notes: 1. Surface mounted on FR4 board, t ≤ 10 sec.

2. Pulse width ≤ 300µs, duty cycle ≤ 2%.

4. Pulse width limited by maximum junction temperature.

3. Guaranteed by design, not subject to production.

REV:A

AQW-JTR14