Electrical Characteristics (at TA=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Max

Unit

Min

Classification of hFE

Range

Rank

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Comchip Technology CO., LTD.

REV:A

Page 2

QW-JTR137

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector-base cut-off current

Emitter-base cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Base-emitter voltage

Teransition frequency

Collector-base output capacitance

Typ

2SC1623-L5-HF

2SC1623-L6-HF

2SC1623-L7-HF

135-270

200-400

300-600

VCBO

VCEO

VEBO

ICBO

IEBO

hFE

VCE(sat)

VBE(sat)

VBE

Ft

Cob

V

V

V

µA

µA

MHz

pF

V

V

V

60

50

5

0.1

0.1

600

200

135

0.3

1

0.65

0.55

250

3

IC = 100µA, IE = 0

IC = 1mA, IB = 0

IE = 100µA, IC = 0

VCB = 60V, IE = 0

VEB = 5V, IC = 0

VCE = 6V, IC = 1mA

IC = 100mA, IB = 10mA

IC = 100mA, IB = 10mA

VCE = 6V, IC = 1mA

VCE = 6V, IC = 10mA

VCB = 6V, IE = 0, f = 1MHz

General Purpose Transistors