TC7SA00F/FU

2007-11-01

1

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

TC7SA00F,TC7SA00FU

2-Input NAND Gate

Features

• High Output current

• 3.6-V tolerant input.

• 3.6-V power down protection output.

• TC74VCX00FT equivalent.

Characteristics

Symbol

Rating

Unit

Power supply voltage

−0.5~4.6

V

DC input voltage

−0.5~4.6

V

−0.5~4.6 (Note 1)

DC output voltage

V

Input diode current

−50

mA

Output diode current

−50 (Note 3)

mA

DC output current

±50

mA

Power dissipation

200

mW

±100

mA

Storage temperature range

−65~150

°C

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings and the operating ranges.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

TC7SA00F

TC7SA00FU

Weight

SSOP5-P-0.95 : 0.016 g (typ.)

SSOP5-P-0.65A : 0.006 g (typ.)