Electrical Characteristics (at TA=25°C unless otherwise noted)

Comchip Technology CO., LTD.

Page 2

SMD ESD Protection Diode

QW-JP119

Symbol

Typ

Parameter

Min

Max

Unit

Reverse leakage current

Conditions

VRWM

V

Pin1 to Pin3 and Pin2 to Pin3

VRWM

V

IR

µA

Pin1 to Pin3 and Pin2 to Pin3

12

0.5

7

Pin3 to Pin1 and Pin3 to Pin2

Breakdown voltage

VBR

V

13.3

7.5

V

VC

VBR

V

20

IR

µA

Pin3 to Pin1 and Pin3 to Pin2

0.5

VC

V

VC

V

VC

V

VR = VRWM, f =1MHz

14

18

27

Junction capacitance

CJ

pF

Junction capacitance

pF

CJ

CJ

pF

30

CJ

pF

Pin3 to Pin1 and Pin3 to Pin2

Pin3 to Pin1 and Pin3 to Pin2

Pin3 to Pin1 and Pin3 to Pin2

Pin3 to Pin1 and Pin3 to Pin2

Pin3 to Pin1 and Pin3 to Pin2

Pin1 to Pin3 and Pin2 to Pin3

Pin1 to Pin3 and Pin2 to Pin3

Pin1 to Pin3 and Pin2 to Pin3

Pin1 to Pin3 and Pin2 to Pin3

Pin1 to Pin3 and Pin2 to Pin3

VR = VRWM

VR = VRWM

IT = 1mA

IT = 1mA

IPP = 5A

IPP = 5A

IPP = 13A

IPP = 13A

VR = VRWM, f =1MHz

VR = 0V, f =1MHz

VR = 0V, f = 1MHz

Notes : 1. Other voltage available upon request.

2. Non-repetitive current pulse 8/20µs exponential decay waveform according to IEC 61000-4-5.

Clamping voltage (Note 2)

Clamping voltage (Note 2)

Reverse standoff voltage

(Note 1)

50

50

30

REV:B