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BC558 Datasheet(PDF) 2 Page - ON Semiconductor

Part # BC558
Description  Amplifier Transistors
PDF  7 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

BC558 Datasheet(HTML) 2 Page - ON Semiconductor

  BC558 Datasheet HTML 1Page - ON Semiconductor BC558 Datasheet HTML 2Page - ON Semiconductor BC558 Datasheet HTML 3Page - ON Semiconductor BC558 Datasheet HTML 4Page - ON Semiconductor BC558 Datasheet HTML 5Page - ON Semiconductor BC558 Datasheet HTML 6Page - ON Semiconductor BC558 Datasheet HTML 7Page - ON Semiconductor  
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BC556B, BC557A, B, C, BC558B
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector − Emitter Breakdown Voltage
(IC = −2.0 mAdc, IB = 0)
BC556
BC557
BC558
V(BR)CEO
−65
−45
−30
−
−
−
−
−
−
V
Collector − Base Breakdown Voltage
(IC = −100 mAdc)
BC556
BC557
BC558
V(BR)CBO
−80
−50
−30
−
−
−
−
−
−
V
Emitter − Base Breakdown Voltage
(IE = −100 mAdc, IC = 0)
BC556
BC557
BC558
V(BR)EBO
−5.0
−5.0
−5.0
−
−
−
−
−
−
V
Collector−Emitter Leakage Current
(VCES = −40 V)
BC556
(VCES = −20 V)
BC557
BC558
(VCES = −20 V, TA = 125°C)
BC556
BC557
BC558
ICES
−
−
−
−
−
−
−2.0
−2.0
−2.0
−
−
−
−100
−100
−100
−4.0
−4.0
−4.0
nA
mA
ON CHARACTERISTICS
DC Current Gain
(IC = −10 mAdc, VCE = −5.0 V)
A Series Device
B Series Devices
C Series Devices
(IC = −2.0 mAdc, VCE = −5.0 V)
BC557
A Series Device
B Series Devices
C Series Devices
(IC = −100 mAdc, VCE = −5.0 V)
A Series Device
B Series Devices
C Series Devices
hFE
−
−
−
120
120
180
420
−
−
−
90
150
270
−
170
290
500
120
180
300
−
−
−
800
220
460
800
−
−
−
−
Collector − Emitter Saturation Voltage
(IC = −10 mAdc, IB = −0.5 mAdc)
(IC = −10 mAdc, IB = see Note 1)
(IC = −100 mAdc, IB = −5.0 mAdc)
VCE(sat)
−
−
−
−0.075
−0.3
−0.25
−0.3
−0.6
−0.65
V
Base − Emitter Saturation Voltage
(IC = −10 mAdc, IB = −0.5 mAdc)
(IC = −100 mAdc, IB = −5.0 mAdc)
VBE(sat)
−
−
−0.7
−1.0
−
−
V
Base−Emitter On Voltage
(IC = −2.0 mAdc, VCE = −5.0 Vdc)
(IC = −10 mAdc, VCE = −5.0 Vdc)
VBE(on)
−0.55
−
−0.62
−0.7
−0.7
−0.82
V
SMALL−SIGNAL CHARACTERISTICS
Current − Gain − Bandwidth Product
(IC = −10 mA, VCE = −5.0 V, f = 100 MHz)
BC556
BC557
BC558
fT
−
−
−
280
320
360
−
−
−
MHz
Output Capacitance
(VCB = −10 V, IC = 0, f = 1.0 MHz)
Cob
−
3.0
6.0
pF
Noise Figure
(IC = −0.2 mAdc, VCE = −5.0 V,
BC556
RS = 2.0 kW, f = 1.0 kHz, Df = 200 Hz)
BC557
BC558
NF
−
−
−
2.0
2.0
2.0
10
10
10
dB
Small−Signal Current Gain
(IC = −2.0 mAdc, VCE = 5.0 V, f = 1.0 kHz)
BC557
A Series Device
B Series Devices
C Series Devices
hfe
125
125
240
450
−
−
−
−
900
260
500
900
−
1. IC = −10 mAdc on the constant base current characteristics, which yields the point IC = −11 mAdc, VCE = −1.0 V.



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