STP20NM60FP datasheet(3/18 Pages) STMICROELECTRONICS

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STB20NM60/-1 - STP20NM60FP - STP20NM60 - STW20NM60

Electrical ratings

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Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220/D²PAK

I²PAK/TO-247

TO-220FP

VDS

Drain-source voltage (VGS = 0)

600

VGS

Gate- source voltage

±30

Drain current (continuous) at TC = 25°C

20 (1)

Limited only by maximum temperature allowed

Drain current (continuous) at TC = 100°C

12.6

12.6 (1)

IDM

(2)

Pulse width limited by safe operating area

Drain current (pulsed)

80 (1)

PTOT

Total dissipation at TC = 25°C

192

Derating factor

1.5

0.36

W/°C

dv/dt (3)

ISD < 20A, di/dt < 400A/µs, VDD < V(BR)/DSS, Tj < TJMAX

Peak diode recovery voltage slope

V/ns

VISO

Insulation withstand voltage (RMS) from all

three leads to external heat sink

(t=1s;TC=25°C)

2500

Tstg

Storage temperature

-65 to 150

°C

Max. operating junction temperature

150

°C

Table 3.

Thermal resistance

Symbol

Parameter

TO-220/D²PAK

I²PAK/TO-247

TO-220FP

Unit

Rthj-case

Thermal resistance junction-case max

0.65

2.8

°C/W

Rthj-amb

Thermal resistance junction-ambient max

62.5

°C/W

Maximum lead temperature for soldering

purpose

300

°C

Table 4.

Avalanche data

Symbol

Parameter

Max. value

Unit

IAS

Avalanche current, repetitive or not-

repetitive (pulse width limited by Tj max)

EAS

Single pulse avalanche energy

(starting Tj = 25 °C, ID = IAS, VDD = 50 V)

650

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