BAS16H

Taiwan Semiconductor

1

Version: A2412

215mA, 100V High Speed Switching Diode

FEATURES

● AEC-Q101 qualified

● Fast switching speed

● Ideal for automated placement

● Moisture sensitivity level: level 1, per J-STD-020

● RoHS Compliant

● Halogen-free

APPLICATIONS

● High-speed switching

● General-purpose switching

MECHANICAL DATA

● Case: SOT-23

● Molding compound meets UL 94V-0 flammability rating

● Terminal: Matte tin plated leads, solderable per J-STD-002

● Meet JESD 201 class 2 whisker test

● Weight: 8.00mg (approximately)

KEY PARAMETERS

PARAMETER

VALUE

UNIT

IF

215

mA

VRRM

100

V

IFSM

2

A

TJ MAX

150

°C

VF at IF=150mA

1.25

V

Configuration

Single die

PACKAGE: SOT-23

PIN CONFIGURATION

CIRCUIT DIAGRAM

ABSOLUTE MAXIMUM RATINGS (T

A

= 25°C unless otherwise noted)

PARAMETER

SYMBOL

VALUE

UNIT

Power dissipation(1)

PD

350

mW

Repetitive peak reverse voltage

VRRM

100

V

Forward current

IF

215

mA

Repetitive peak forward current

IFRM

300

mA

Non-repetitive peak forward surge current

t = 1s

IFSM

1

A

t = 1µs

2

A

Junction temperature

TJ

-55 to +150

°C

Storage temperature

TSTG

-55 to +150

°C

Note:

1. Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint