QPD1035L datasheet(1/21 Pages) QORVO

Part #	QPD1035L

Description	40 W, 50 V, DC – 6 GHz, GaN RF Power Transistor

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Manufacturer	QORVO [Qorvo, Inc]

Direct Link	https://www.qorvo.com/

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QPD1035L

40 W, 50 V, DC – 6 GHz, GaN RF Power Transistor

Data Sheet Rev. A, May 2024 | Subject to change without notice

1 of 21

www.qorvo.com

®

Key Features

• Operating Frequency Range: DC – 6 GHz

• Operating Voltage: 50 V

• Output Power (P3dB) = 50 W (1)

• Drain Efficiency (P3dB) = 52.2 % (1)

• Linear Gain = 15.1 dB (1)

• Low thermal resistance package

Notes:

(1) Typical EVB Performance at 5.65 GHz

Product Overview

The QPD1035L is a 40W (P3dB) discrete GaN on SiC

HEMT which operates from DC to 6 GHz on a 50V supply

rail. The device has an input pre-match and is ideally

suitable for broadband amplifier application for pulsed

and CW operations.

Lead free and RoHS compliant.

Functional Block Diagram

Ordering Information

Part No.

Description

QPD1035L

30W, DC

– 6GHz, Flanged

QPD1035LEVB0-50V

QPD1035L 5.4

– 5.9 GHz 50V EVB

Applications

• Military Radar

• Civilian Radar

• Professional and military radio communications

• Test instrumentation

• Wideband or narrowband amplifiers

• Jammers

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