QPD2120D

1200 um Discrete GaAs pHEMT

Data Sheet Rev. A, August 2022

Subject to change without notice. | All rights reserved

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Product Overview

The Qorvo QPD2120D is a discrete 1200 micron pHEMT

which operates from DC to 20 GHz. The QPD2120D is

fabricated using Qorvo’s proven standard 0.25 um power

pHEMT

production

process.

This

process

features

advanced techniques to optimize microwave power and

efficiency at high drain bias operating conditions.

The QPD2120D typically provides 31 dBm of output power

at P1dB with gain of 11 dB and 57% power-added efficiency

at 1 dB compression. This performance makes the

QPD2120D appropriate for high efficiency applications.

The protective overcoat layer with silicon nitride provides a

level of environmental robustness and scratch protection.

The QPD2120D is lead-free and RoHS compliant.

Key Features

• Frequency: DC – 20 GHz

• Output Power (P1dB)1: 31 dBm

• Typical Gain1: 11 dB

• Typical PAE1dB1: 57%

• Noise Figure1: 1 dB

• No Vias

• Technology: 0.25 um GaAs pHEMT

• Chip Dimensions: 0.41 x 0.54 x 0.10 mm

Notes:

1. @ 12 GHz

Functional Block Diagram

Pad Dimensions

Terminal

71 um x 71 um

Gate

71 um x 71 um

Drain

113.8 um x 71 um

Source (outermost)

113.8 um x 106 um

Source (center)

Applications

• Defense and Aerospace

• High-Reliability

• Test and Measurement

• Commercial

• Broadband Wireless

Ordering Information

Part Number

Description

QPD2120D

1200 um GaAs pHEMT

Gate

Drain

Source