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TLN225F Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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TLN225F Datasheet(HTML) 1 Page - Toshiba Semiconductor |
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1 / 5 page ![]() TLN225(F) 2007-10-01 1 TOSHIBA Infrared LED GaAℓAs Infrared Emitter TLN225(F) Lead(Pb)-Free For Space−Optical−Transmission • High radiant power: Po = 18mW(typ.) at IF = 50mA • Wide half−angle value: θ1/2 = ±21°(typ.) • High−speed response: tr, tf = 30ns(typ.) • Light source for remote control • Designed for transmission of wireless AV signals • Designed for high−speed data transmission Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Forward current IF 100 mA Pulse forward current IFP 1000 (Note 1) mA Power dissipation PD 220 mW Reverse voltage VR 4 V Operating temperature Topr −25~85 °C Storage temperature Tstg −30~100 °C Soldering temperature(5s) Tsol 260 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Frequency = 100kHz, duty = 1% Optical And Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Forward voltage VF IF = 50 mA ― 1.6 1.8 V Reverse current IR VR = 4 V ― ― 10 μA Radiant power PO IF = 50 mA 14 18 ― mW Radiant intensity IE IF = 50 mA ― 40 ― mW / sr Rise time, fall time tr, tf IFP = 100 mA, PW = 100 ns ― 30 ― ns Cut −off frequency fc IF = 50 mADC +5 mAp−p (Note 2) 10 15 ― MHz Capacitance CT VR = 0, f = 1 MHz ― 110 ― pF Peak emission wavelength λP IF = 50 mA 830 870 900 nm Spectral line half width Δλ IF = 50 mA ― 50 ― nm Half value angle θ 2 1 IF = 50 mA ― ±21 ― ° Note 2: Frequency when modulation light power decreases by 3dB from 1 MHz. Unit: mm TOSHIBA 4−5MA1 Pin Connection 1. Anode 2. Cathode 12 |
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