TLN226(F)

2007-10-01

1

TOSHIBA Infrared LED GaAℓAs Infrared Emitter

TLN226(F)

Lead(Pb)-Free

For Space−optical−transmission

• Wide half−angle value: θ1/2 = ±13°(typ.)

• Light source for remote control

• Designed for transmission of wireless AV signals purpose.

• Designed for high−speed data transmission

Characteristic

Symbol

Rating

Unit

Forward current

100

mA

Pulse forward current

1000(Note1)

mA

Power dissipation

220

mW

Reverse voltage

4

V

Operating temperature

−25~85

°C

Storage temperature

−30~100

°C

Soldering temperature (5s)

260

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and

individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Note 1: Frequency = 100kHz, duty = 1%

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Forward voltage

⎯

1.8

2.2

V

Reverse current

⎯

⎯

60

μA

Radiant power

14

18

⎯

mW

Radiant intensity

⎯

60

⎯

mW / sr

Rise time, fall time

⎯

30

⎯

ns

Cut

−off frequency

(Note 2)

10

15

⎯

MHz

Capacitance

⎯

110

⎯

Peak emission wavelength

830

870

900

nm

Spectral line half width

Δλ

⎯

50

⎯

nm

Half value angle

θ

2

1

⎯

±13

⎯

°

Note 2: Frequency when modulation light power decreases by 3dB from 1 MHz.

Unit: mm

TOSHIBA

4−5M1A

Pin Connection

1. Anode

2. Cathode

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