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TLN227 Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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TLN227 Datasheet(HTML) 4 Page - Toshiba Semiconductor |
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4 / 5 page ![]() TLN227(F) 2007-10-01 4 Frequency f (MHz) Frequency Characteristic (typ.) 0.3 1 3 10 100 0.1 30 4 −8 −10 2 0 −2 −4 −6 0.5 5 50 Distance d (m) Distance Characteristics 0.1 1 10 0.1 0.01 1000 100 10 1 Pop = 23mW at IFP = 180mA, f = 100kHz, duty = 50% Po = 14mW at IF = 50mA Wavelength Characteristic (typ.) Wavelength λ (nm) 1.0 0 800 0.8 0.6 0.4 0.2 840 880 920 960 1000 IF = 50mA Radiation Pattern (typ.) Ta = 25°C Relative radiant power 0 0.2 0.4 0.6 0.8 1.0 0° 10° 20° 30° 40° 50° 60° 70° 80° 90° 10° 20° 30° 40° 50° 60° 70° 80° 90° Relative PO – Ta (typ.) Ambient temperature Ta (°C) 10 0.1 −50 1 −25 0 25 75 50 IF = 50mA 100 125 |
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