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TLN238 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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TLN238 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
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2 / 5 page ![]() TLN238(F) 2007-10-01 2 Optical and Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Forward voltage VF IF = 100 mA ⎯ 1.6 2.0 V Reverse current IR VR = 4 V ⎯ ⎯ 60 μA Radiant intensity IE IF = 50 mA 40 70 ⎯ mW/sr Cut-off frequency fc IF = 50 mA + 5 mAP-P (Note 3) ⎯ 15 ⎯ MHz Peak emission wavelength λP IF = 50 mA ⎯ 870 ⎯ nm Half-angle value θ 2 1 IF = 50 mA ⎯ ±18 ⎯ ° Note 3: This is the frequency when modulation light power decreases by 3 dB from 1 MHz. Handling Precautions • Soldering must be performed under the stopper. • When forming the leads, bend each lead at least 5 mm from the package body. Soldering must be performed after the leads have been formed. • The radiant intensity decreases over time due to current flowing in the infrared LED. When designing circuits, take into account the change in radiant intensity over time. |
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