2N1613 datasheet(1/5 Pages) STMICROELECTRONICS

Part #	2N1613

Description	SWITCHES AND UNIVERSAL AMPLIFIERS

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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2N1613

2N1711

January 1989

SWITCHES AND UNIVERSAL AMPLIFIERS

The 2N1613 and 2N1711 are silicon planar epitaxial

NPN transistors in Jedec TO-39 metal case. They

are designed for use in high-performance amplifier,

oscillator and switching circuits.

The 2N1711 is also used to advantage in amplifiers

where low noise is an important factor.

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Val ue

Unit

VCBO

Collector-base Voltage (IE =0)

75

V

VCER

Collector-emitter Voltage (RBE ≤ 10 Ω)50

V

VEBO

Emitter-base Voltage (I C =0)

7

V

I C

Collector Current

500

mA

Pto t

Total Power Dissipation at T amb

≤ 25 °C

at T cas e

≤ 25 °C

at T cas e ≤ 100 °C

0.8

3

1.7

W

Tstg,Tj

Storage and Junction Temperature

– 65 to 200

°C

Products approved to CECC 50002-104 avail-

able on request.

DESCRIPTION

TO-39

INTERNAL SCHEMATIC DIAGRAM

1/5

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