TLP166J datasheet(3/4 Pages) TOSHIBA

3 / 4 page

TLP166J

2007-10-01

Electrical Characteristics (Ta = 25°C)

Characteristic

Symbol

Test Condition

Min.

Typ.

Max.

Unit

Forward voltage

IF=10mA

1.0

1.15

1.3

Reverse current

VR=5 V

―

μA

Capacitance

V=0, f=1MHz

―

Peak off

−state current

IDRM

VDRM=600V

―

1000

Peak on

−state voltage

VTM

ITM=70mA

―

1.7

2.8

Holding current

―

0.6

―

Critical rate of rise

of off

−state voltage

dv / dt

Vin=240Vrms, Ta=85°C

(Note 3)

200

500

―

V / μs

Critical rate of rise

of commutating voltage

dv / dt(c)

IT=15mA, Vin=60Vrms

(Note 3)

―

0.2

―

V / μs

Coupled Electrical Characteristics (Ta = 25°C)

Characteristic

Symbol

Test Condition

Min.

Typ.

Max.

Unit

Trigger LED current

IFT

VT=6V

―

Inhibit voltage

VIH

IF=rated IFT

―

Leakage in inhibited state

IIH

IF=rated IFT

VT=rated VDRM

―

600

μA

Capacitance input to output

VS=0, f=1MHz

―

0.8

―

Isolation resistance

VS=500V, R.H.≤ 60%

1×10

―

Ω

AC, 1 minute

2500

―

AC, 1 second, in oil

―

5000

―

Vrms

Isolation voltage

BVS

DC, 1 minute, in oil

―

5000

―

Vdc

(Note 3): dv / dt Test circuit

VCC

Vin

4kΩ

Rin

120Ω

5V, VCC

dv / dt (c)

dv / dt

TLP166J Datasheet(PDF) 3 Page - Toshiba Semiconductor

TLP166J Datasheet(HTML) 3 Page - Toshiba Semiconductor

Html Pages

1 2 3 4

Datasheet Download

Link URL