2SC3875

NPN Epitaxial Silicon Transistor

GENERAL PURPOSE TRANSISTOR

Collector-Emitter Voltage: VCEO = 50V

Collector Dissipation: PC = 150mW

Absolute Maximum Ratings (TA=25

oC)

Characteristic

Symbol

Rating

Unit

Collector-Base Voltage

VCBO

60

V

Collector-Emitter Voltage

VCEO

50

V

Emitter-Base Voltage

VEBO

5

V

Collector Current

IC

150

mA

Collector Dissipation

PC

150

mW

Junction Temperature

TJ

150

oC

Storage Temperature

TSTG

-55~+150

oC

Electrical Characteristics (TA=25

oC)

Characteristic

Symbol

Test Conditions

Min

Max

Unit

Collector-Base Breakdown Voltage

BVCBO

IC= 100µA, IE= 0

60

V

Collector-Emitter Breakdown Voltage

BVCEO

IC= 1mA, IB= 0

50

V

Emitter-Base Breakdown Voltage

BVEBO

IE= 100µA, IC= 0

5

V

Collector Cut-off Current

ICBO

VCB= 60V, IE= 0

0.1

µA

Collector Cut-off Current

ICEO

VCE= 45V, IB= 0

0.2

µA

Emitter Cut-off Current

IEBO

VEB= 5V, IC= 0

0.1

µA

DC Current Gain

hFE

VCE= 6V, IC= 2mA

70

700

Collector-Emitter Saturation Voltage

VCE(sat)

IC= 100mA, IB= 10mA

0.25

V

Base-Emitter Saturation Voltage

VBE(sat)

IC= 100mA, IB= 10mA

1

V

Transition Frequency

fT

VCE= 10V, IC= 1mA

f= 100MHz

80

MHz

hFE CLASSIFICATION

Classification

G

Y

GR

BL

hFE

70-140

120-240

200-400

350-700

Device Marking

2SC3875-G=ALO ; 2SC3875-Y=ALY ; 2SC3875-GR=ALG ; 2SC3875-G=ALL

1. Emitter

2. Base

3. Collector

SOT-23

Tolerance : 0.1mm

Dimensions (Unit : mm)

NPN 50V 150MA F=80MHZ SOT-23

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