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TSM4944D Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSM4944D Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 4 page  Preliminary TSM4944D 30V Dual N-Channel MOSFET 1/4 Version: Preliminary SOP-8 Features ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance Application ● Load Switch ● Dc-DC Conversion Ordering Information Part No. Package Packing TSM4944DCS RL SOP-8 2.5Kpcs / 13” Reel Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID 12.2 A Pulsed Drain Current IDM 30 A Continuous Source Current (Diode Conduction) a,b IS 1.9 A Ta = 25 oC 2.3 Maximum Power Dissipation Ta = 75 oC PD 1.2 W Operating Junction Temperature TJ +150 oC Operating Junction and Storage Temperature Range TJ, TSTG -55 to +150 oC Thermal Performance Parameter Symbol Limit Unit Junction to Case Thermal Resistance RӨJC 1.8 oC/W Junction to Ambient Thermal Resistance (PCB mounted) RӨJA 40 oC/W Notes: a. Maximum DC current limited by the package b. Surface Mounted on 1” x 1” FR4 Board, t ≤ 10 sec. PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) ID (A) 13.2 @ VGS = 10V 12.2 30 18 @ VGS = 4.5V 9.4 Block Diagram Dual N-Channel MOSFET Pin Definition: 1. Source 1 8. Drain 1 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 4. Gate 2 5. Drain 2 |
Similar Part No. - TSM4944D |
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Similar Description - TSM4944D |
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