BAS85_5

© NXP B.V. 2009. All rights reserved.

Product data sheet

Rev. 05 — 25 March 2009

3 of 9

NXP Semiconductors

BAS85

Schottky barrier diode

6.

Thermal characteristics

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

7.

Characteristics

[1]

Pulse test: tp ≤ 300 µs; δ≤ 0.02.

Table 6.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Rth(j-a)

thermal resistance from

junction to ambient

in free air

[1] -

-

320

K/W

Table 7.

Characteristics

Tamb =25 °C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VF

forward voltage

IF = 0.1 mA

-

-

240

mV

IF = 1 mA

-

-

320

mV

IF = 10 mA

-

-

400

mV

IF = 30 mA

-

-

500

mV

IF = 100 mA

-

-

800

mV

IR

reverse current

VR =25V

[1] -

-

2.3

µA

Cd

diode capacitance

VR = 1 V; f = 1 MHz

-

-

10

pF