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RM100 Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor

Part # RM100
Description  HIGH SPEED SWITCHING USE INSULATED TYPE
PDF  3 Pages
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

RM100 Datasheet(HTML) 2 Page - Mitsubishi Electric Semiconductor

  RM100 Datasheet HTML 1Page - Mitsubishi Electric Semiconductor RM100 Datasheet HTML 2Page - Mitsubishi Electric Semiconductor RM100 Datasheet HTML 3Page - Mitsubishi Electric Semiconductor  
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Feb.1999
ABSOLUTE MAXIMUM RATINGS (Tj=25
°C)
Unit
V
V
V
MITSUBISHI FAST RECOVERY DIODE MODULES
RM100CA/C1A-XXF
HIGH SPEED SWITCHING USE
INSULATED TYPE
12
600
720
480
Symbol
VRRM
VDRM
VR (DC)
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Reverse DC voltage
Voltage class
16*
800
960
640
20*
1000
1100
800
24
1200
1350
960
Unit
A
A
A2s
°C
°C
V
N·m
kg·cm
N·m
kg·cm
g
Conditions
Resistive load, TC=75
°C
One half cycle at 60Hz, peak value
Value for one cycle of surge current
Charged part to case
Main terminal screw M4
Mounting screw M5
Typical value
Ratings
100
2000
16.7
× 103
–40~150
–40~125
2500
0.98~1.47
10~15
1.47~1.96
15~20
90
Symbol
IDC
IFSM
I2t
Tj
Tstg
Viso
—
—
Parameter
DC output current
Surge (non-repetitive) forward current
I2t for fusing
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Unit
mA
V
µs
µC
°C/W
°C/W
Limits
Symbol
IRRM
VFM
trr
Qrr
Rth (j-c)
Rth (c-f)
Parameter
Repetitive reverse current
Forward voltage
Reverse recovery time
Reverse recovery charge
Thermal resistance
Contact thermal resistance
Test conditions
Tj=150
°C, VRRM applied
Tj=25
°C, IFM=100A, instantaneous meas.
IFM=100A, di/dt=–200A/
µs, VR=300/600V*1, Tj=150°C
Junction to case
Case to fin, conductive grease applied
Min.
—
—
—
—
—
—
Typ.
—
—
—
—
—
—
Max.
20
1.5
0.8
60
0.5
0.3
ELECTRICAL CHARACTERISTICS
* Order made
*1 12 class: VR=300V
20, 24 class: VR=600V



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