MPSA13

NPN Darlington Transistor

• This device is designed for applications requiring extremely high Current gain at collector Currents to 1.0A.

• Sourced from process 05.

Absolute Maximum Ratings T

a = 25°C unless otherwise noted

Electrical Characteristics T

a=25°C unless otherwise noted

* Pulse Test: Pulse Width

≤300μs, Duty Cycle≤2%

Symbol

Parameter

Value

Units

VCES

Collector-Emitter Voltage

30

V

VCBO

Collector-Base Voltage

30

V

VEBO

Emitter-Base Voltage

10

V

IC

Collector Current

- Continuous

1.2

A

TJ, TSTG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Symbol

Parameter

Test Condition

Min.

Max.

Units

Off Characteristics

V(BR)CES

Collector-Emitter Breakdown Voltage

IC = 100μA, IB = 0

30

V

ICBO

Collector-Cutoff Current

VCB = 30V, IE = 0

100

nA

IEBO

Emitter-Cutoff Current

VEB = 10V, IC = 0

100

nA

On Characteristics *

hFE

DC Current Gain

VCE = 5.0V, IC =10mA

VCE = 5.0, IC = 100mA

5,000

10,000

VCE (sat)

Collector-Emitter Saturation Voltage

IC = 100mA, IB = 0.1mA

1.5

V

VBE (on)

Base-Emitter On Voltage

IC = 100mA,VCE = 5.0V

2.0

V

Small Signal Characteristics

fT

Current Gain Bandwidth Product

IC = 10mA, VCE = 10V, f = 100MHz

125

pF

TO-92

1. Emitter 2. Base 3. Collector

1