Plastic Infrared Emitting Diode

OP168F, OP268F, OP269 Series

© TT electronics plc

General Note

TT Electronics reserves the right to make changes in product specification without

notice or liability. All information is subject to TT Electronics’ own data and is

considered accurate at time of going to print.

TT Electronics | OPTEK Technology

2900 E. Plano Pkwy, Plano, TX 75074 | Ph: +1 972 323 2200

www.ttelectronics.com | sensors@ttelectronics.com

Rev E 08/2020 Page 4

Electrical Specifications

Electrical Characteristics (TA = 25 °C unless otherwise noted)

SYMBOL

PARAMETER

MIN

TYP

MAX

UNITS

TEST CONDITIONS

Input Diode

B

Spectral Bandwidth between Half Power

Points

OP168

OP268, OP269

-

-

50

80

-

-

nm

IF = 10 mA

∆λP /∆T

Spectral Shift with Temperature

OP168

OP268, OP269

-

-

±0.30

±0.18

-

-

nm/°C

IF = Constant

θHP

Emission Angle at Half Power Points

OP168

OP268

OP269

-

-

-

104°

104°

46°

-

-

-

Degree

IF = 20 mA

tr

Rise Time

OP168

OP268, OP269

-

-

1000

500

-

-

ns

IF(PK)=100 mA, PW=10 µs, D.C.=10 %

tf

Fall Time

OP168

OP268, OP269

-

-

500

250

-

-

ns

IF(PK)=100 mA, PW=10 µs, D.C.=10 %

Beam Angle OP268FA - OP268FC

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

-80

-60

-40

-20

0

20

40

60

80

Angle (Degrees)

Beam Angle OP168 & OP268 Package

Beam Angle OP269 Package

Beam Angle

0%

10%

20%

30%

40%

50%

60%

70%

80%

90%

100%

110%

-80 -70 -60 -50 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80

Degrees