© TT electronics plc

General Note

TT Electronics reserves the right to make changes in product specification without

notice or liability. All information is subject to TT Electronics’ own data and is

considered accurate at time of going to print.

High Reliability NPN Silicon Phototransistor

OP604TXV, OP604S

Obsolete (OP602(TX,TXV), OP603 (TX, TXV), OP604TX)

TT Electronics | OPTEK Technology

2900 E. Plano Pkwy, Plano, TX 75074 | Ph: +1 972 323 2200

www.ttelectronics.com | sensors@ttelectronics.com

Rev D 07/2022 Page 2

Absolute Maximum Ratings (TA = 25° C unless otherwise noted)

Storage Temperature Range

-65° C to +150° C

Operating Temperature Range

-55° C to +125° C

Collector-Emitter Voltage

50 V

Emitter-Collector Voltage

7.0 V

Soldering Temperature (5 seconds with soldering iron)

(1)

260° C

Power Dissipation

(2)

50 mW

Electrical Characteristics (TA = 25° C unless otherwise noted)

Input Diode

SYMBOL

PARAMETER

MIN

TYP

MAX

UNITS

TEST CONDITIONS

IC(ON)

On-State Collector Current

OP604TXV, OP604S

7

-

-

mA

VCE = 5.0 V, EE = 20 mW/cm

2(3)(4)

ICEO

Collector Dark Current

-

-

25

nA

VCE = 10.0 V, EE = 0

-

-

100

µA

VCE = 30.0 V, EE = 0 TA = 100° C

V(BR)CEO

Collector-Emitter Breakdown Voltage

50

-

-

V

IC= 100 µA, EE = 0

V(BR)ECO

Emitter-Collector Breakdown Voltage

7

-

-

V

IC= 100 µA, EE = 0

VCE(SAT)

Collector-Emitter Saturation Voltage

-

-

0.4

V

IC = 0.4 mA, EE = 20 mW/cm

2(3)(4)

tf

Rise Time

-

-

20

VCC = 30 V, IC = 1.00 mA,

RL = 100 Ω

(2)(3)(4)

µs

tr

Fall Time

-

-

20

Notes:

(1)

Refer to Application Bulleting 202, which discusses proper techniques for soldering pill-type devices to PCBoards.

(2)

No clean or low solids. RMA flux is recommended. Duration can be extended to 10 seconds maximum when wave soldering.

(3)

Derate linearly 0.5 mW/° C above 25° C.

(4)

Junction temperature maintained at 25° C.

(5)

Light source is an unfiltered tungsten lamp operating at CT=2870 K or equivalent source.

Electrical Specifications