Slotted Optical Switch

OPB660N

Obsolete (OPB660T)

© TT electronics plc

Rev B

05/2022

Page 2

TT Electronics | OPTEK Technology

2900 E. Plano Pkwy, Plano, TX 75074 | Ph: +1 972 323 2200

www.ttelectronics.com | sensors@ttelectronics.com

General Note

TT Electronics reserves the right to make changes in product specification without

notice or liability. All information is subject to TT Electronics’ own data and is

considered accurate at time of going to print.

Electrical Specifications

Absolute Maximum Ratings (TA = 25° C unless otherwise noted)

Storage & Operating Temperature Range

-40° C to +100° C

Lead Soldering Temperature [1/16 inch (1.6 mm) from the case for 5 sec. with soldering iron]

(1)

260° C

Input Diode

Forward DC Current

50 mA

Peak Forward Current (1 μs pulse width, 300 pps)

1 A

Reverse DC Voltage

3 V

Power Dissipation

(2)

100 mW

Output Phototransistor

Collector-Emitter Voltage

24 V

Collector DC Current

30 mA

Power Dissipation

(3)

200 mW

Electrical Characteristics (TA = 25° C unless otherwise noted)

SYMBOL

PARAMETER

MIN

TYP

MAX

UNITS

TEST CONDITIONS

Input Diode

VF

Forward Voltage

-

-

1.6

V

IF = 10 mA

IR

Reverse Current

-

-

100

µA

VR = 3 V

Output Phototransistor

V(BR)CEO

Collector-Emitter Breakdown Voltage

24

-

-

V

ICE = 100 µA

BVECO

Emitter Reverse Breakdown Voltage

0.4

-

-

V

IEC = 100 µA

ICEO

Collector-Emitter Dark Current

-

-

100

µA

VCE = 5 V

Combined

VSAT

Collector-Emitter Saturation Voltage

-

-

0.4

V

IF = 10 mA, IC = 100 µA, (gap unblocked)

IC(ON)

On-State Collector Current

600

-

-

µA

IF = 10 mA, VCE = 5 V

Notes:

(1)

RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering. A maximum of 20 grams force may be ap-

plied to leads when soldering.

(2)

Derate linearly 1.33 mW/° C above 25° C.

(3)

Derate linearly 2.0 mW/° C above 25° C.