2N6388 datasheet(1/4 Pages) STMICROELECTRONICS

Part #	2N6388

Description	SILICON NPN POWER DARLINGTON TRANSISTOR

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2N6388

SILICON NPN POWER DARLINGTON TRANSISTOR

s

STMicroelectronics PREFERRED

SALESTYPE

s

NPN DARLINGTON

s

HIGH CURRENT CAPABILITY

s

INTEGRATED ANTIPARALLEL

COLLECTOR-EMITTER DIODE

DESCRIPTION

The device is a silicon epitaxial-base NPN power

transistor in monolithic Darlington configuration

mounted in Jedec TO-220 plastic package.

It is inteded for use in low and medium frequency

power applications.

®

INTERNAL SCHEMATIC DIAGRAM

April 1999

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage (IB = 0)

80

V

VCEV

Collector-Emitter Voltage (VBE = -1.5V)

80

V

VCER

Collector-Emitter Voltage (RBE

≤ 100Ω)

80

V

VCEO

Collector-Emitter Voltage (IB = 0)

80

V

VEBO

Emitter-Base Voltage (IC = 0)

5

V

IC

Collector Current

10

A

ICM

Collector Peak Current

15

A

IB

Base Current

0.25

A

Ptot

Total Dissipation at Tc

≤ 25 oC

65

W

Tstg

Storage Temperature

-65 to 150

oC

Tj

Max. Operating Junction Temperature

150

oC

R1 Typ. = 10 K

Ω

R2 Typ. = 160

Ω

1

2

3

TO-220

1/4

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