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D407 Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors

Part # D407
Description  P-Channel Enhancement Mode Field Effect Transistor
PDF  6 Pages
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Manufacturer  AOSMD [Alpha & Omega Semiconductors]
Direct Link  http://www.aosmd.com
Logo AOSMD - Alpha & Omega Semiconductors

D407 Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors

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background image
AOD407
Symbol
VDS
VGS
IDM
IAR
EAR
TJ, TSTG
Symbol
Typ
Max
16.7
25
40
50
RqJC
2.5
3
Maximum Junction-to-Case
B
Steady-State
°C/W
Thermal Characteristics
Parameter
Units
Maximum Junction-to-Ambient
A
t ≤ 10s
RqJA
°C/W
Maximum Junction-to-Ambient
A
Steady-State
°C/W
W
TA=70°C
1.6
Junction and Storage Temperature Range
-55 to 175
Power Dissipation
A
TA=25°C
PDSM
2.5
A
Repetitive avalanche energy L=0.1mH
C
mJ
Power Dissipation
B
TC=25°C
PD
W
TC=100°C
Avalanche Current
C
Continuous Drain
Current
G
Maximum
Units
Parameter
TC=25°C
TC=100°C
50
Absolute Maximum Ratings TA=25°C unless otherwise noted
ID
Gate-Source Voltage
Drain-Source Voltage
-60
Pulsed Drain Current
C
-12
-10
-30
P-Channel Enhancement
Mode Field Effect Transistor
°C
V
V
±20
25
A
-12
23
Features
VDS (V) = -60V
ID = -12A (VGS = -10V)
RDS(ON) < 115mW (VGS = -10V)
RDS(ON) < 150mW (VGS = -4.5V)
100% UIS tested
100% RG tested
General Description
The AOD407 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and low
gate resistance. With the excellent thermal
resistance of the DPAK package, this device is well
suited for high current load applications.
-RoHS Compliant
-Halogen Free*
G
D
S
TO252
DPAK
TopView
Bottom View
G
G
D
D
S
S
D
Rev.8.0: August 2019
www.aosmd.com
Page 1 of 6


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