© TT electronics plc

General Note

TT Electronics reserves the right to make changes in product specification without

notice or liability. All information is subject to TT Electronics’ own data and is

considered accurate at time of going to print.

Wide Gap Optical Sensor

OPB856Z

Rev B

09/2016

Page 2

TT Electronics | OPTEK Technology

2900 E. Plano Pkwy, Plano, TX 75074 | Ph: +1 972 323 2200

www.ttelectronics.com | sensors@ttelectronics.com

Absolute Maximum Ratings (TA = 25° C unless otherwise noted)

Storage & Operating Temperature Range

-40° C to +85° C

Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron]

260° C

Input Diode (See OP165 for additional information)

Continuous Forward DC Current

40 mA

Reverse Voltage

2 V

Power Dissipation

(1)

100 mW

Output Phototransistor (See OP505 for additional information)

Collector-Emitter Voltage

30 V

Emitter-Collector Voltage

5 V

Power Dissipation

(1)

100 mW

Electrical Specifications

Electrical Characteristics (TA = 25° C unless otherwise noted)

SYMBOL

PARAMETER

MIN

TYP

MAX

UNITS

TEST CONDITIONS

Input Diode (See OP165 for additional information)

VF

Forward Voltage

-

-

1.7

V

IF = 20 mA

IR

Reverse Current

-

-

100

µA

VR = 2 V

Output Phototransistor (See OP505 for additional information)

V(BR)CEO

Collector-Emitter Breakdown Voltage

30

-

-

V

IC = 100 µA

V(BR)ECO

Emitter-Collector Breakdown Voltage

5

-

-

V

IE = 100 µA

ICEO

Collector Dark Current

-

-

100

nA

VCE = 10 V, IF = 0, EE = 0

Combined

IC(ON)

On-State Collector Current

(3)

1.8

-

-

mA

VCE = 5 V, IF = 20 mA, d = 2”

( (50.8 mm)(2)

Notes:

(1) Derate linearly 1.67 mW/°C above 25 ° C..

(2) Distance between lenses along the optical axis is “d”.

(3) All parameters tested using pulse technique.