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TS9007 Datasheet(PDF) 2 Page - Taiwan Semiconductor Company, Ltd

Part # TS9007
Description  300mA Low Noise CMOS LDO
PDF  8 Pages
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Manufacturer  TSC [Taiwan Semiconductor Company, Ltd]
Direct Link  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

TS9007 Datasheet(HTML) 2 Page - Taiwan Semiconductor Company, Ltd

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TS9007
300mA Low Noise CMOS LDO
2/8
Version: C07
Absolute Maximum Rating
Parameter
Symbol
Limit
Unit
Supply Voltage
VIN
-0.3 ~ +7
V
Input Supply Voltage (Recommended)
VOPR
+2 ~ +6
V
Output Short-Circuit Duration
Infinite
Power Dissipation
SOT-25
300
SOT-23
300
DFN 2x2
PD
500
mW
SOT-25
250
SOT-23
300
Thermal Resistance
DFN 2x2
ӨJA
165
°C/W
Junction Temperature Range
TJ
+150
°C
Storage Temperature Range
TSTG
-65 ~ +150
°C
Notes: Stress above the listed absolute rating may cause permanent damage to the device.
Electrical Characteristics (TA = 25oC, VIN = (VOUT+1V), CIN=COUT=0.47uF, VEN=VIN, unless otherwise noted.)
Parameter
Conditions
Min
Typ
Max
Unit
Output Voltage
VIN =VO + 1V, IO=10mA
-2.0
--
+2
%
Output Current Limit
Short-circuit output
--
200
--
mA
Maximum Output Current
VIN =Vo+1V,
300
--
--
mA
Line Regulation
VIN =(VOUT+1V) to 6V, IO=10mA
--
0.3
--
%/V
VIN =Vo+1V, 1mA≤IL≤300mA
VOUT≥2.5V
--
0.2
1.0
Load Regulation
VIN =Vo+1V, 1mA≤IL≤200mA
VOUT <2.5V
--
0.2
1.0
%
Io=300mA, VOUT =Vo - 2%
VOUT ≥2.5V
--
500
600
Dropout Voltage
Io=200mA, VOUT =Vo - 2%
VOUT <2.5V
--
800
1000
mV
Shutdown Supply Current
EN=0V
--
0.01
--
uA
Ground Pin Current
Io=0mA
--
90
150
uA
f=100Hz, Io=1mA
--
60
--
f=1KHz, Io=1mA
--
57
--
Ripple Rejection (PSRR)
f=10Hz, Io=1mA
--
45
--
dB
Io=10mA, f=10Hz to 100kHz,
Bypass = 0nF
--
45
--
Output Noise
Io=10mA, f=10Hz to 100kHz,
Bypass = 30nF
--
15
--
uVrms
Shutdown Exit Delay (note 2)
RLOAD = 50Ω
--
45
300
uS
EN Logic Low Level
VIN =2.0V to 5.5V
--
--
0.4
EN Logic High Level
VIN =2.0V to 5.5V
1.5
--
VIN
V
EN Input Bias Current
VIN =2.0V to 5.5V
--
--
--
uA
Thermal Shutdown
Shutdown Temperature
--
160
--
oC
Thermal Shutdown Hysteresis
--
20
--
oC
Notes:
a. The drop out voltage varies depending on output voltage selection.
Dropout is defined as VIN - VOUT when VOUT is 100mV below VOUT where VIN = Vout+1V for nominal VOUT
b. Time needed for VOUT to reach 90% of final value



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