| Electronic Components Datasheet Search |
|
FOD814 Datasheet(PDF) 4 Page - ON Semiconductor |
|
|
|||||||||||||||||||||||||||||
FOD814 Datasheet(HTML) 4 Page - ON Semiconductor |
|
4 / 16 page ![]() ©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com FOD814 Series, FOD817 Series Rev. 2.9 3 Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. TA = 25°C Unless otherwise specified. Symbol Parameter Value Unit FOD814 FOD817 Total Device TSTG Storage Temperature -55 to +150 °C TOPR Operating Temperature -55 to +105 -55 to +110 °C TJ Junction Temperature -55 to +125 °C TSOL Lead Solder Temperature 260 for 10 seconds °C JC Junction-to-Case Thermal Resistance 210 °C/W PTOT Total Device Power Dissipation 200 mW EMITTER IF Continuous Forward Current ±50 50 mA VR Reverse Voltage 6 V PD Power Dissipation 70 mW Derate Above 100°C 1.7 mW/°C DETECTOR VCEO Collector-Emitter Voltage 70 V VECO Emitter-Collector Voltage 6 V IC Continuous Collector Current 50 mA PC Collector Power Dissipation 150 mW Derate Above 90°C 2.9 mW/°C |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |