TS13002ACT datasheet(2/5 Pages) TSC

2 / 5 page

TS13002A

High Voltage NPN Transistor

2/5

Version: B07

Electrical Specifications (Ta = 25oC unless otherwise noted)

Parameter

Conditions

Symbol

Min

Typ

Max

Unit

Static

Collector-Base Voltage

IC = 1mA, IB = 0

BVCBO

700

Collector-Emitter Breakdown Voltage

IC = 10mA, IE = 0

BVCEO

400

Emitter-Base Breakdown Voltage

IE = 1mA, IC = 0

BVEBO

Collector Cutoff Current

VCB = 700V, IE = 0

ICBO

Emitter Cutoff Current

VEB = 7V, IC = 0

IEBO

Collector-Emitter Saturation Voltage

IC / IB = 50mA / 10mA

IC / IB = 100mA / 10mA

IC / IB = 200mA / 20mA

VCE(SAT)1

VCE(SAT)2

VCE(SAT)3

0.2

0.45

0.4

1.5

Base-Emitter Saturation Voltage

IC / IB = 50mA / 10mA

IC / IB = 100mA / 10mA

VBE(SAT)1

VBE(SAT)2

1.2

DC Current Gain

VCE = 10V, IC = 10mA

VCE = 10V, IC = 100mA

VCE = 10V, IC = 280mA

hFE1

hFE2

hFE3

Dynamic

Frequency

VCE = 10V, IC = 0.1A

MHz

Output Capacitance

VCB = 10V, f = 0.1MHz

Cob

Resistive Load Switching Time (Ratings)

Rise Time

1.1

Storage Time

tSTG

Fall Time

VCC = 125V, IC = 100mA,

IB1 = IB2 = 20mA,

tp = 25uS

Duty Cycle ≤1%

0.2

0.7

Note : pulse test: pulse width ≤5mS, duty cycle ≤10%

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