TSM55N03 datasheet(2/6 Pages) TSC

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TSM55N03

25V N-Channel MOSFET

2/6

Version: A07

Electrical Specifications (Ta = 25oC unless otherwise noted)

Parameter

Conditions

Symbol

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

VGS = 0V, ID = 250uA

BVDSS

Gate Threshold Voltage

VDS = VGS, ID = 250uA

VGS(TH)

1.0

1.9

3.0

Gate Body Leakage

VGS = ±20V, VDS = 0V

IGSS

±100

Zero Gate Voltage Drain Current

VDS = 25V, VGS = 0V

IDSS

1.0

On-State Drain Current

VDS ≥5V, VGS = 10V

ID(ON)

VGS = 4.5V, ID = 30A

7.5

Drain-Source On-State Resistance

VGS = 10V, ID = 30A

RDS(ON)

4.5

mΩ

Forward Transconductance

VDS = 15V, ID = 15A

gfs

Diode Forward Voltage

IS = 20A, VGS = 0V

VSD

0.85

1.3

Dynamic

Total Gate Charge

Gate-Source Charge

Qgs

Gate-Drain Charge

VDS = 15V, ID = 20A,

VGS = 5V

Qgd

Input Capacitance

Ciss

2325.9

Output Capacitance

Coss

330.55

Reverse Transfer Capacitance

VDS = 15V, VGS = 0V,

f = 1.0MHz

Crss

173.91

Switching

Turn-On Delay Time

td(on)

15.13

Turn-On Rise Time

Turn-Off Delay Time

td(off)

45.27

Turn-Off Fall Time

VDD = 15V, RL = 15Ω,

ID = 1A, VGEN = 10V,

RG = 6Ω

7.6

Notes:

a. pulse test: PW ≤300µS, duty cycle ≤2%

b. For DESIGN AID ONLY, not subject to production testing.

b. Switching time is essentially independent of operating temperature.

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