HAT1111C datasheet(3/7 Pages) RENESAS

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HAT1111C

R07DS1177EJ0700 Rev.7.00

Page 3 of 6

Mar 19, 2014

Main Characteristics

1.6

1.2

0.8

0.4

100

150

200

-30

-10

-3

-1

-0.3

-0.1

-0.1 -0.3

-0.03

-1

-3

-10 -30 -100

-10

-8

-6

-4

-2

-4

-6

-8

-10

-8

-6

-4

-2

-4

-6

-8

-10

-0.03

-0.01

-100

Ta = 25°C,1shot pulse

When using the FR4 board.

-2.5 V

-3 V

Tc = 75

°C

−25°C

Ambient Temperature

Ta (°C)

Power vs. Temperature Derating

Drain to Source Voltage

VDS (V)

Maximum Safe Operation Area

Drain to Source Voltage

VDS (V)

Typical Output Characteristics

Pulse Test

Gate to Source Voltage

VGS (V)

Typical Transfer Characteristics

VDS = -10 V

Pulse Test

μs

-600

-400

-200

-4

-8

-12

-16

-20

-0.01

-1

-0.1

-10

100

1000

Gate to Source Voltage

VGS (V)

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

Drain Current

ID (A)

Static Drain to Source on State Resistance

vs. Drain Current

-800

ID = -2 A

-1 A

-0.5 A

Pulse Test

VGS = 10 V

Pulse Test

Operation in this

area is limited by

RDS(on)

-3.5 V

100

μs

-10 V

VGS = -2 V

-4.5V

-4 V

-4.5 V

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