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PSMN040-200W Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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PSMN040-200W Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() isc N-Channel MOSFET Transistor PSMN040-200W www.iscsemi.com 1 FEATURES ·Drain Current -ID= 50A@ TC=25℃ ·Drain Source Voltage -VDSS= 200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 40mΩ(Max)@VGS= 10V DESCRIPTION · DC-to-DC Converter · General Industrial Applications · Power Motor Control ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 200 V VGS Gate-Source Voltage-Continuous ± 20 V ID Drain Current-Continuous 50 A IDM Drain Current-Single Pulse 200 A PD Total Dissipation @TC=25℃ 300 W TJ Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.5 ℃ /W file:///C:/Users/Administrator/Do cuments/WeChat Files/wxid_tz5gn4uyhzq221/FileSt orage/Temp/1718069263025.jpg |
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