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STR910FAM32H6T Datasheet(PDF) 63 Page - STMicroelectronics |
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STR910FAM32H6T Datasheet(HTML) 63 Page - STMicroelectronics |
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63 / 99 page ![]() STR91xFAx32 STR91xFAx42 STR91xFAx44 Electrical characteristics 63/99 7.6 Supply current characteristics VDDQ = 2.7 - 3.6V, VDD = 1.65 - 2V, TA = -40 / 85 °C unless otherwise specified. Figure 15. Sleep mode current vs temperature with LVD on Table 16. Supply current characteristics Symbol Parameter Test Conditions Value Unit Min Typ Max IDDRUN Run Mode Current All peripherals on CPU_CLK = 96 MHz (1)(2) 1. ARM core and peripherals active with all clocks on. Power can be conserved by turning off clocks to peripherals which are not required. 2. mA/MHz data valid down to 10 MHz. Below this frequency the ratio mA/MHz increases. 1.7 2.3 mA/MHz All peripherals off 1.3 1.6 IIDLE Idle Mode Current All peripherals on (2)(3) 3. ARM core stopped and all peripheral clocks active. 1.14 1.7 mA/MHz All peripherals off(2)(4) 4. ARM core stopped and all peripheral clocks stopped. 0.45 0.75 mA/MHz ISLEEP(IDD) Sleep Mode Current, IDD LVD On (5) 55 825 µA LVD Off (5) 5. ARM core and all peripheral clocks stopped (with exception of RTC) 50 820 µA ISLEEP(IDDQ) Sleep Mode Current, IDDQ LVD On (4) 7TBD µA LVD Off (4) 7TBD µA IRTC_STBY RTC Standby Current Measured on VBATT pin 0.9 1.2 µA ISRAM_STBY SRAM Standby Current Measured on VBATT pin 5 240 µA 0 200 400 600 800 1000 1200 1400 1600 1800 2000 0 20 40 60 80 100 120 -20 -40 TEMP [°C] Vcc = 1.8 V and Vcc = 2.0 V and corner process standard process |
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