AOD608 datasheet(2/9 Pages) AOSMD

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AOD608

Symbol

Min

Typ

Max

Units

BVDSS

TJ=55°C

IGSS

1mA

VGS(th)

1.5

2.2

ID(ON)

TJ=125°C

Ω

gFS

VSD

0.75

3.5

Ciss

500

Coss

106

Crss

2.6

Ω

Qg(10V)

8.4

Qg(4.5V)

4.1

Qgs

1.6

Qgd

2.6

tD(on)

4.8

2ns

tD(off)

2.1

trr

17.5

Qrr

11.1

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS

Body Diode Reverse Recovery Charge

Total Gate Charge

IF=10A, dI/dt=100A/µs

Turn-Off DelayTime

Turn-Off Fall Time

Body Diode Reverse Recovery Time

IF=10A, dI/dt=100A/µs

Input Capacitance

N Channel Electrical Characteristics (TJ=25°C unless otherwise noted)

Parameter

Conditions

STATIC PARAMETERS

Drain-Source Breakdown Voltage

ID=250µA, VGS=0V

IDSS

Zero Gate Voltage Drain Current

VDS=32V, VGS=0V

µA

Gate-Body leakage current

VDS=0V, VGS= ±20V

Gate Threshold Voltage

VDS=VGS ID=250µA

On state drain current

VGS=10V, VDS=5V

RDS(ON)

Static Drain-Source On-Resistance

Forward Transconductance

Ω

VGS=4.5V, ID=4A

VDS=5V, ID=10A

IS=1A,VGS=0V

VGS=10V, ID=10A

Diode Forward Voltage

VGS=10V, VDS=20V, RL=2Ω,

RGEN=3Ω

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Total Gate Charge

VGS=10V, VDS=20V, ID=10A

VGS=0V, VDS=30V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

SWITCHING PARAMETERS

Reverse Transfer Capacitance

Gate resistance

Output Capacitance

A: The value of R θJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A =25°C. The

Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends

on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.

B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper

dissipation limit for cases where additional heatsinking is used.

C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.

D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300

µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming

a maximum junction temperature of T J(MAX)=175°C.

G. The maximum current rating is limited by bond-wires.

H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA

curve provides a single pulse rating.

Rev0: Aug 2006

Alpha & Omega Semiconductor, Ltd.

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